FL - 4th International Conference
Mass, Charge and Spin Transport in Inorganic Materials: Fundamentals to Devices
Co-Chairs:
David AWSCHALOM, University of Chicago, USA
Yuri MISHIN, George Mason University, USA
Gerhard WILDE, University of Muenster, Germany
Han-Ill YOO, Seoul National University, Korea (Programme Chair)
Members:
John AGREN, KTH - Royal Institute of Technology, Sweden
Koji AMEZAWA, Tohoku University, Japan
Joerg APPENZELLER, Purdue University, USA
Boris S. BOKSTEIN, National Univ.of Science and Technology "MISIS", Russia
Alessandra CONTINENZA, University of L'Aquila, Italy
V.I. DYBKOV, Institute for Problems of Materials Science, Ukraine
Doreen D. EDWARDS, Alfred University, USA
Vladimir I. FALKO, Lancaster University, UK
Marco FANCIULLI, CNR-IMM MDM National Laboratory, Italy
Robert FILIPEK, AGH University of Science and Technology, Poland
Odila FLORENCIO, UFSCar, Brazil
Andriy GUSAK, Cherkasy National University, Ukraine
John HARDING, University of Sheffield, UK
Paul HEITJANS, Leibniz University Hannover, Germany
Philip HOFMANN, Aarhus University, Denmark
Thomas IHN, ETH Zurich, Switzerland
Tatsumi ISHIHARA, Kyushu University, Japan
Rodolfo JALABERT, University of Strasbourg, France
Janez JAMNIK, National Institute of Chemistry, Slovenia
Berend T. JONKER, Naval Research Laboratory, USA
Antonino LA MAGNA, CNR-IMM, Italy
Arne Nylandsted LARSEN, Aarhus University, Denmark
Walter LENGAUER, Vienna University of Technology, Austria
Christopher D. LING, University of Sydney, Australia
Daniel LOSS, University of Basel, Switzerland
Sadamichi MAEKAWA, Japan Atomic Energy Agency (JAEA), Japan
Fernando MARQUES, University of Aveiro, Portugal
Manfred MARTIN, RWTH Aachen University, Germany
Eric Jan MITTEMEIJER, Max Planck Inst.for Intelligent Systems, Germany
Shuichi MURAKAMI, Tokyo Institute of Technology, Japan
Ryan O'HAYRE, Colorado School of Mines, USA
Hideo OHNO, Tohoku University, Japan
Su Ying QUEK, National University of Singapore, Singapore
Eugen RABKIN, Technion, Israel
José SANTISO, CSIC-ICN, Spain
Richard SISSON, Worcester Polytechnic Institute, USA
Werner SITTE, University of Leoben, Austria
Felix VON OPPEN, Free University of Berlin, Germany
Hans-Dieter WIEMHOEFER, University of Muenster, Germany
Shu YAMAGUCHI, The University of Tokyo, Japan
David YOUNG, University of New South Wales, Australia
David AWSCHALOM, University of Chicago, USA
Yuri MISHIN, George Mason University, USA
Gerhard WILDE, University of Muenster, Germany
Han-Ill YOO, Seoul National University, Korea (Programme Chair)
Members:
John AGREN, KTH - Royal Institute of Technology, Sweden
Koji AMEZAWA, Tohoku University, Japan
Joerg APPENZELLER, Purdue University, USA
Boris S. BOKSTEIN, National Univ.of Science and Technology "MISIS", Russia
Alessandra CONTINENZA, University of L'Aquila, Italy
V.I. DYBKOV, Institute for Problems of Materials Science, Ukraine
Doreen D. EDWARDS, Alfred University, USA
Vladimir I. FALKO, Lancaster University, UK
Marco FANCIULLI, CNR-IMM MDM National Laboratory, Italy
Robert FILIPEK, AGH University of Science and Technology, Poland
Odila FLORENCIO, UFSCar, Brazil
Andriy GUSAK, Cherkasy National University, Ukraine
John HARDING, University of Sheffield, UK
Paul HEITJANS, Leibniz University Hannover, Germany
Philip HOFMANN, Aarhus University, Denmark
Thomas IHN, ETH Zurich, Switzerland
Tatsumi ISHIHARA, Kyushu University, Japan
Rodolfo JALABERT, University of Strasbourg, France
Janez JAMNIK, National Institute of Chemistry, Slovenia
Berend T. JONKER, Naval Research Laboratory, USA
Antonino LA MAGNA, CNR-IMM, Italy
Arne Nylandsted LARSEN, Aarhus University, Denmark
Walter LENGAUER, Vienna University of Technology, Austria
Christopher D. LING, University of Sydney, Australia
Daniel LOSS, University of Basel, Switzerland
Sadamichi MAEKAWA, Japan Atomic Energy Agency (JAEA), Japan
Fernando MARQUES, University of Aveiro, Portugal
Manfred MARTIN, RWTH Aachen University, Germany
Eric Jan MITTEMEIJER, Max Planck Inst.for Intelligent Systems, Germany
Shuichi MURAKAMI, Tokyo Institute of Technology, Japan
Ryan O'HAYRE, Colorado School of Mines, USA
Hideo OHNO, Tohoku University, Japan
Su Ying QUEK, National University of Singapore, Singapore
Eugen RABKIN, Technion, Israel
José SANTISO, CSIC-ICN, Spain
Richard SISSON, Worcester Polytechnic Institute, USA
Werner SITTE, University of Leoben, Austria
Felix VON OPPEN, Free University of Berlin, Germany
Hans-Dieter WIEMHOEFER, University of Muenster, Germany
Shu YAMAGUCHI, The University of Tokyo, Japan
David YOUNG, University of New South Wales, Australia
Koji AMEZAWA, Tohoku University, Japan
David AWSCHALOM, University of Chicago, USA
Boris S. BOKSTEIN, National Univ.of Science and Tech. "MISIS", Russia
Zhihong CHEN, Purdue University, USA
Ioannis DERETZIS, CNR-IMM, Italy
Jorge R. FRADE, University of Aveiro, Portugal
Paul HEITJANS, Leibniz University Hannover, Germany
Tatsumi ISHIHARA, Kyushu University, Japan
Tatsuya KAWADA, Tohoku University, Japan
Aleksey KOZIKOV, ETH Zurich, Switzerland
Fernando MARQUES, University of Aveiro, Portugal
Manfred MARTIN, RWTH Aachen University, Germany
Graeme MURCH, Newcastle University, Australia
Amy NOVICK-COHEN, Technion, Israel
Lourdes PELAZ, University of Valladolid, Spain
Eugen RABKIN, Technion, Israel
Jutta ROGAL/Ralf DRAUTZ, Ruhr University Bochum, Germany
Paul A. SALVADOR, Carnegie Mellon University, USA
Boris STRAUMAL, Institute of Solid State Physics, RAS, Russia
Shu, YAMAGUCHI, The University of Tokyo, Japan
Bilge YILDIZ, Massachusetts Institute of Technology, USA
Hiroo YUGAMI, Tohoku University, Japan
David AWSCHALOM, University of Chicago, USA
Boris S. BOKSTEIN, National Univ.of Science and Tech. "MISIS", Russia
Zhihong CHEN, Purdue University, USA
Ioannis DERETZIS, CNR-IMM, Italy
Jorge R. FRADE, University of Aveiro, Portugal
Paul HEITJANS, Leibniz University Hannover, Germany
Tatsumi ISHIHARA, Kyushu University, Japan
Tatsuya KAWADA, Tohoku University, Japan
Aleksey KOZIKOV, ETH Zurich, Switzerland
Fernando MARQUES, University of Aveiro, Portugal
Manfred MARTIN, RWTH Aachen University, Germany
Graeme MURCH, Newcastle University, Australia
Amy NOVICK-COHEN, Technion, Israel
Lourdes PELAZ, University of Valladolid, Spain
Eugen RABKIN, Technion, Israel
Jutta ROGAL/Ralf DRAUTZ, Ruhr University Bochum, Germany
Paul A. SALVADOR, Carnegie Mellon University, USA
Boris STRAUMAL, Institute of Solid State Physics, RAS, Russia
Shu, YAMAGUCHI, The University of Tokyo, Japan
Bilge YILDIZ, Massachusetts Institute of Technology, USA
Hiroo YUGAMI, Tohoku University, Japan
The evolution of the structure and properties of materials during processing and their degradation and working lifetime is often controlled by mass and charge transport processes. Further on, diffusion of electrons, spin-polarized carriers, ions, atoms, molecules or of more complex entities such as dislocation loops, grain boundaries, pores and gas bubbles either in crystalline solids or in less ordered or amorphous media may be critical for the feasibility and operation of a vast array of advanced applications, from, for example, high temperature structural components, to microelectronic, microionic, optical, superconducting and memresistive and switching devices.
Main objectives of this conference which follows the ones on the same subject held in the frames of CIMTEC Conferences are to update recent achievements in the fundamentals of transport mechanisms in inorganic materials and the role of transport in materials reactivity, synthesis, processing, properties, and device design and performance.
Covered are crystalline ionic/covalent materials, metals and metal alloys, intermetallic compounds, semiconductor materials, and amorphous solids, glasses and melts.
Special focus will be on transport phenomena in small confined systems and in nanostructures for their challenging relevance, as well as on novel theories and computational modeling and simulation approaches for defect formation, interaction, aggregation and diffusion, capable to direct or complement experiments.
Application engineering studies addressing the role of mass and charge transport as enablers for the design of new high performing devices, and/or the efficient operation of engineered components under service conditions of high temperature, thermo-mechanical stress and strain, corrosive environments, radiation, electrical and magnetic fields also will be suitable topics for discussion.
Main objectives of this conference which follows the ones on the same subject held in the frames of CIMTEC Conferences are to update recent achievements in the fundamentals of transport mechanisms in inorganic materials and the role of transport in materials reactivity, synthesis, processing, properties, and device design and performance.
Covered are crystalline ionic/covalent materials, metals and metal alloys, intermetallic compounds, semiconductor materials, and amorphous solids, glasses and melts.
Special focus will be on transport phenomena in small confined systems and in nanostructures for their challenging relevance, as well as on novel theories and computational modeling and simulation approaches for defect formation, interaction, aggregation and diffusion, capable to direct or complement experiments.
Application engineering studies addressing the role of mass and charge transport as enablers for the design of new high performing devices, and/or the efficient operation of engineered components under service conditions of high temperature, thermo-mechanical stress and strain, corrosive environments, radiation, electrical and magnetic fields also will be suitable topics for discussion.
Session Topics
FL-1 Mass and charge transport mechanisms
- Transport in prevalently ionic crystalline materials (single and mixed oxides, halides, minerals) including superconducting metal oxides and fast ion conductors
- Transport in non-ionic crystalline materials (carbides, borides, nitrides...)
- Transport in crystalline metals, metallic alloys and in ordered intermetallic compounds
- Transport in topological insulators
- Transport in amorphous solids, glasses, melts, and in gas/vapor phase
- Transport in small confining systems (grain boundaries, surfaces, interfaces, thin films, multilayers and porous media)
- Transport in semiconductor materials
- Transport in nanostructures and nanoscale systems, quantum transport, ballistic transport, electron spin dynamics and transport
- Interactions of intrinsic point defects and impurities with clusters, extended defects, grain boundaries and interfaces
- Effects of ion implantation, irradiation, thermal and thermodynamic potential gradients, thermal, magnetic and electric fields, pressure and strain on transport
- Theory, simulation and new techniques for transport studies
FL-2 Role of transport in materials development, properties and behaviour
- Solid state reactions, gas solid reactions, liquid solid reactions
- Nucleation, crystallization, phase separation, phase transformations, solute segregation, amorphization
- Synthesis of powders, fibers and nanomaterials; self assembly; bioinpired materials; sintering of dense or porous materials, hybrids, composites; functionally graded materials; multilayers, multilattices, etc...
- Joining, coating and surface modification (e.g. diffusion bonding, thin/thick film deposition, ion implantation, laser irradiation, pack cementation, nitridation...)
- Materials properties and behavior as related to transport phenomena (mechanical, chemical, electrochemical, physical)
- Mass/charge transport-induced degradation
FL-3 Role of mass and charge transport in application engineering
Examples of sectors of interest include:
- Micro(nano)electronics, micro(nano)ionics, spintronics
- Energy (fuel cells, batteries, supercapacitors, thermoelectrics, photovoltaics, hydrogen storage, nuclear fission, fusion..)
- Catalytic processes, separation technologies
- Metallurgy and other materials processing industries
- High temperature structural applications