Symposium FH
Recent Developments in the Research and Application of Transparent Conducting and Semiconducting Oxides
Programme Chair:
David S. GINLEY / John D. PERKINS, NREL, USA
Members:
Yi-Bing CHENG, Monash University, Australia
Klaus ELLMER, Helmholtz Centre Berlin for Materials and Energy, Germany
Elvira FORTUNATO, New University of Lisbon, Portugal
Alexander GASKOV, Moscow State University, Russia
Hao GONG, National University Singapore, Singapore
Gideon GRADER, Technion, Israel
Claes G. GRANQVIST, Uppsala University, Sweden
Hyeongtag JEON, Hanyang University, Korea
Jae Kyeong JEONG, Inha University, Korea
George KIRIAKIDIS, FORTH - IESL, Greece
Andreas KLEIN, Darmstadt University of Technology, Germany
Tobin J. MARKS, Northwestern University, USA
Rodrigo MARTINS, CEMOP/UNINOVA, Portugal
Thomas MASON, Northwestern University, USA
Francis MAURY, CIRIMAT, ENSIACET, France
Julia E. MEDVEDEVA, Missouri University of Science & Technology, USA
Tadatsugu MINAMI, Kanazawa Institute of Technology, Japan
Martyn E. PEMBLE, Tyndall National Institute, Ireland
Giorgio SBERVEGLIERI, CNR-IDASC, Italy
David O. SCANLON, University College London, Ireland
David SHEEL, Salford University, UK
Yuzo SHIGESATO, Aoyama Gakuin University, Japan
Kazushige UEDA, Kyushu Institute of Technology, Japan
Chris G. VAN DE WALLE, University of California, Santa Barbara, USA
Tim VEAL, University of Liverpool, UK
John F. WAGER, Oregon State University, USA
Aron WALSH, University of Bath, UK
David S. GINLEY / John D. PERKINS, NREL, USA
Members:
Yi-Bing CHENG, Monash University, Australia
Klaus ELLMER, Helmholtz Centre Berlin for Materials and Energy, Germany
Elvira FORTUNATO, New University of Lisbon, Portugal
Alexander GASKOV, Moscow State University, Russia
Hao GONG, National University Singapore, Singapore
Gideon GRADER, Technion, Israel
Claes G. GRANQVIST, Uppsala University, Sweden
Hyeongtag JEON, Hanyang University, Korea
Jae Kyeong JEONG, Inha University, Korea
George KIRIAKIDIS, FORTH - IESL, Greece
Andreas KLEIN, Darmstadt University of Technology, Germany
Tobin J. MARKS, Northwestern University, USA
Rodrigo MARTINS, CEMOP/UNINOVA, Portugal
Thomas MASON, Northwestern University, USA
Francis MAURY, CIRIMAT, ENSIACET, France
Julia E. MEDVEDEVA, Missouri University of Science & Technology, USA
Tadatsugu MINAMI, Kanazawa Institute of Technology, Japan
Martyn E. PEMBLE, Tyndall National Institute, Ireland
Giorgio SBERVEGLIERI, CNR-IDASC, Italy
David O. SCANLON, University College London, Ireland
David SHEEL, Salford University, UK
Yuzo SHIGESATO, Aoyama Gakuin University, Japan
Kazushige UEDA, Kyushu Institute of Technology, Japan
Chris G. VAN DE WALLE, University of California, Santa Barbara, USA
Tim VEAL, University of Liverpool, UK
John F. WAGER, Oregon State University, USA
Aron WALSH, University of Bath, UK
Daniel BELLET, Grenoble INP, France
Reuben T. COLLINS, Colorado School of Mines, USA
John CONLEY, Oregon State University, USA
Klaus ELLMER, Helmholtz Centre Berlin for Materials and Energy, Germany
David S. GINLEY, NREL, USA
Hao GONG, National University Singapore, Singapore
Marius GRUNDMANN, Leipzig University, Germany
Masataka HASEGAWA, AIST, Japan
Julia W.P. HSU / Yun-Ju LEE, University of Texas at Dallas, USA
George KIRIAKIDIS, University of Crete, Greece
Takashi KOIDA, AIST, Japan
Sang Yeol LEE, Cheongju University, Korea
Rodrigo MARTINS, CEMOP/UNINOVA, Portugal
Julia E. MEDVEDEVA, Missouri University of Science & Technology, USA
Toshihiro MIYATA, Kanazawa Institute of Technology, Japan
Martyn E. PEMBLE, Tyndall National Institute, Ireland
John PERKINS, NREL, USA
Marina RUMYANTSEVA, Moscow State University, Russia
Giorgio SBERVEGLIERI, University of Brescia, Italy
David O. SCANLON, University College London, Ireland
Bernd SZYSZKA, TU Berlin, Germany
Michael TONEY, Stanford University, USA
Chris G. VAN DE WALLE, University of California, Santa Barbara, USA
Tim VEAL, University of Liverpool, UK
Reuben T. COLLINS, Colorado School of Mines, USA
John CONLEY, Oregon State University, USA
Klaus ELLMER, Helmholtz Centre Berlin for Materials and Energy, Germany
David S. GINLEY, NREL, USA
Hao GONG, National University Singapore, Singapore
Marius GRUNDMANN, Leipzig University, Germany
Masataka HASEGAWA, AIST, Japan
Julia W.P. HSU / Yun-Ju LEE, University of Texas at Dallas, USA
George KIRIAKIDIS, University of Crete, Greece
Takashi KOIDA, AIST, Japan
Sang Yeol LEE, Cheongju University, Korea
Rodrigo MARTINS, CEMOP/UNINOVA, Portugal
Julia E. MEDVEDEVA, Missouri University of Science & Technology, USA
Toshihiro MIYATA, Kanazawa Institute of Technology, Japan
Martyn E. PEMBLE, Tyndall National Institute, Ireland
John PERKINS, NREL, USA
Marina RUMYANTSEVA, Moscow State University, Russia
Giorgio SBERVEGLIERI, University of Brescia, Italy
David O. SCANLON, University College London, Ireland
Bernd SZYSZKA, TU Berlin, Germany
Michael TONEY, Stanford University, USA
Chris G. VAN DE WALLE, University of California, Santa Barbara, USA
Tim VEAL, University of Liverpool, UK
New amorphous and crystalline metal oxide materials with complex composition as well as wide band-gap nonoxide materials including e.g. nanotube networks and quantum dot structures are extending device designer’s palette of transparent conductors and semiconductors by addressing a variety of cutting edge applications in flexible electronics, new active optoelectronics, even spin photonics. Advances in materials and processing are also extending the range of the more experienced use of transparent conducting oxides in large area flat-panel displays, thin-film solar cells, antistatic coatings, functional and smart glasses and a number of other applications.
However, primary requirements for a continued and expanded application of TCOs and related transparent conducting materials including organic and nanotube based TCs is a clearer understanding of basic materials science such as the electronic structure, carriers origin, mobility and scattering, and doping mechanisms which govern conductivity and transparency, coupled with a better insight into interfacial and chemical compatibility issues and the development of models of the performance limits of materials and devices.
Objective of the International Symposium "Recent Developments in the Research and Application of Transparent Conducting and Semiconducting Oxides2 to be held in Italy, June 15-20, 2014 in the frames of CIMTEC 2014, which follows the discussions on the same subject held at previous CIMTEC Conferences, is to gather specialists from academia and industry to highlight updated developments in the area from fundamental science to materials synthesis, processing techniques device development and advanced/novel/prospective applications.
However, primary requirements for a continued and expanded application of TCOs and related transparent conducting materials including organic and nanotube based TCs is a clearer understanding of basic materials science such as the electronic structure, carriers origin, mobility and scattering, and doping mechanisms which govern conductivity and transparency, coupled with a better insight into interfacial and chemical compatibility issues and the development of models of the performance limits of materials and devices.
Objective of the International Symposium "Recent Developments in the Research and Application of Transparent Conducting and Semiconducting Oxides2 to be held in Italy, June 15-20, 2014 in the frames of CIMTEC 2014, which follows the discussions on the same subject held at previous CIMTEC Conferences, is to gather specialists from academia and industry to highlight updated developments in the area from fundamental science to materials synthesis, processing techniques device development and advanced/novel/prospective applications.
Session Topics
FH-1 Fundamentals
- Electronic structure
- Doping mechanisms
- Carriers origin and dynamics
- Optimizing band structure
- Surfaces and interfaces in hybrid structures
- Amorphous vs crystalline materials basic physics
- Theory and computational approaches
FH-2 Material design and characterization
- Advanced crystalline materials
- ZnO based materials
- p-type transparent conductors
- Indium-free TCOs
- Amorphous metal-oxide materials
- Non-oxide transparent conductors
- Nanowire/nanotube arrays and Q-dot based transparent structures
- Other novel materials/concepts
- Materials characterisation and properties
- PVD/CVD
- Atomic layer deposition
- Spin coating, spray pyrolysis and other chemical techniques
- Direct writing/printing/patterning
- Novel tools and equipment for device fabrication
- Chemical compatibility issues
- Modeling and simulation of materials and devices
FH-3 Device development and applications
- Flexible electronics (e.g. roll-up displays, electronic paper)
- Transparent devices (TTFTs) and applications including TC active layers
- Photovoltaics
- OLED
- Advances in smart /functional applications e.g. photocatalytic/active/protective coatings, smart windows, etc.
- Other advanced/novel/emerging applications