Symposium FI
Materials and Technologies for Solid State Lighting
Programme Chair:
Giancarlo C. RIGHINI, Centro Studi e Ricerche Enrico Fermi, Italy
Members:
Hiroshi AMANO, Nagoya University, Japan
P. Daniel DAPKUS, University of Southern California, USA
Robert DAVIS, Carnegie Mellon University, USA
Martin DAWSON, University of Strathclyde, UK
Martin HEENEY, Queen Mary University of London, UK
H.T.J.M. (Bert) HINTZEN, Eindhoven University of Technology, Netherlands
Chennupati JAGADISH, Australian National University, Australia
Peng JIN, Peking University, China
Jwo-Huei JOU, National Tsing Hua University, Taiwan
Bernard KIPPELEN, Georgia Inst.of Technology, USA
Hao-Chung KUO, National Chiao Tung University, Taiwan
Michael LESZCZYNSKI, TopGaN Ltd., Poland
Rongqing LIANG, Fudan University, China
Michael LORENZ, Universität Leipzig, Germany
Nicola LOVERGINE, University of Salento, Italy
Zheng-Hong LU, University of Toronto, Canada
Xiangyang MA, Zhejiang University, China
Ivan MORENO, University of Zacatecas, Mexico
Shuji NAKAMURA, University of California, USA
Yasushi NANISHI, Ritsumeikan University, Japan
Nadarajah NARENDRAN, Rensselaer Polytechnic Institute, USA
Norbert H. NICKEL, Helmholtz Zentrum Berlin, Germany
Boon S. OOI, King Abdullah University of Science & Technology, Saudi Arabia
Jongwook PARK, Catholic University of Korea, Korea
Jamie D. PHILLIPS, University of Michigan, USA
Matthew PHILLIPS, University of Technology, Sidney, Australia
Angela PIEGARI, ENEA, Italy
David J. ROGERS, Nanovation SARL, France
Joseph SHINAR, Iowa State University, USA
Xiaowei SUN, Nanyang Technology University, Singapore
Nelson TANSU, Lehigh University, USA
Mark E. THOMPSON, University of Southern California, USA
Christian M. WETZEL, Rensselaer Polytechnic Institute, USA
Magnus WILLANDER, Linköping University, Sweden
Chih-Chung YANG, National Taiwan University, Taiwan
Hui-Ying YANG, Singapore University of Technology & Design, Singapore
Giancarlo C. RIGHINI, Centro Studi e Ricerche Enrico Fermi, Italy
Members:
Hiroshi AMANO, Nagoya University, Japan
P. Daniel DAPKUS, University of Southern California, USA
Robert DAVIS, Carnegie Mellon University, USA
Martin DAWSON, University of Strathclyde, UK
Martin HEENEY, Queen Mary University of London, UK
H.T.J.M. (Bert) HINTZEN, Eindhoven University of Technology, Netherlands
Chennupati JAGADISH, Australian National University, Australia
Peng JIN, Peking University, China
Jwo-Huei JOU, National Tsing Hua University, Taiwan
Bernard KIPPELEN, Georgia Inst.of Technology, USA
Hao-Chung KUO, National Chiao Tung University, Taiwan
Michael LESZCZYNSKI, TopGaN Ltd., Poland
Rongqing LIANG, Fudan University, China
Michael LORENZ, Universität Leipzig, Germany
Nicola LOVERGINE, University of Salento, Italy
Zheng-Hong LU, University of Toronto, Canada
Xiangyang MA, Zhejiang University, China
Ivan MORENO, University of Zacatecas, Mexico
Shuji NAKAMURA, University of California, USA
Yasushi NANISHI, Ritsumeikan University, Japan
Nadarajah NARENDRAN, Rensselaer Polytechnic Institute, USA
Norbert H. NICKEL, Helmholtz Zentrum Berlin, Germany
Boon S. OOI, King Abdullah University of Science & Technology, Saudi Arabia
Jongwook PARK, Catholic University of Korea, Korea
Jamie D. PHILLIPS, University of Michigan, USA
Matthew PHILLIPS, University of Technology, Sidney, Australia
Angela PIEGARI, ENEA, Italy
David J. ROGERS, Nanovation SARL, France
Joseph SHINAR, Iowa State University, USA
Xiaowei SUN, Nanyang Technology University, Singapore
Nelson TANSU, Lehigh University, USA
Mark E. THOMPSON, University of Southern California, USA
Christian M. WETZEL, Rensselaer Polytechnic Institute, USA
Magnus WILLANDER, Linköping University, Sweden
Chih-Chung YANG, National Taiwan University, Taiwan
Hui-Ying YANG, Singapore University of Technology & Design, Singapore
Martin ALBRECHT, Leibniz Institute for Crystal Growth, Germany
Etienne BARANOFF, University of Birmingham, UK
Pallab BHATTACHARYA, University of Michigan, USA
Martin DAWSON, University of Strathclyde, UK
Hiroshi FUJIOKA, University of Tokyo, Japan
Axel HOFFMANN, Technical University of Berlin, Germany
Jeong-Ik LEE, OLED Research Center, Korea
Hideto MIYAKE, Mie University, Japan
Yasushi NANISHI, Ritsumeikan University, Japan
Jongwook PARK, Catholic University of Korea, Korea
Ferdinand SCHOLZ, University of Ulm, Germany
Jong-In SHIM, Hanyang University, Korea
Zlatko SITAR, North Carolina State University, USA
Mao-Kuo WEI, National Dong Hua Unviersity, Taiwan
Berit WESSLER, OSRAM Opto Semiconductors GmbH, Germany
Magnus WILLANDER, Linköping University, Sweden
Ken-Tsung WONG, National Taiwan University, Taiwan
Xinhai ZHANG, South University of Science and Technology of China, China
Etienne BARANOFF, University of Birmingham, UK
Pallab BHATTACHARYA, University of Michigan, USA
Martin DAWSON, University of Strathclyde, UK
Hiroshi FUJIOKA, University of Tokyo, Japan
Axel HOFFMANN, Technical University of Berlin, Germany
Jeong-Ik LEE, OLED Research Center, Korea
Hideto MIYAKE, Mie University, Japan
Yasushi NANISHI, Ritsumeikan University, Japan
Jongwook PARK, Catholic University of Korea, Korea
Ferdinand SCHOLZ, University of Ulm, Germany
Jong-In SHIM, Hanyang University, Korea
Zlatko SITAR, North Carolina State University, USA
Mao-Kuo WEI, National Dong Hua Unviersity, Taiwan
Berit WESSLER, OSRAM Opto Semiconductors GmbH, Germany
Magnus WILLANDER, Linköping University, Sweden
Ken-Tsung WONG, National Taiwan University, Taiwan
Xinhai ZHANG, South University of Science and Technology of China, China
High-efficiency solid state lighting is a topic of large importance to the materials research community because of the globally increased need for energy savings. Significant recent advances in the understanding of materials and devices are driving the development of alternative light sources. Full spectrum all colors and white LEDs are ready to be used for many indoor and outdoor displays as well as for illumination purposes. GaN and its alloys with InN and AlN exhibit green, blue and UV high brightness light emission that combined with available red emitters or RGB phosphors used for LEDs and lasers. High-brightness organic LEDs (OLEDs) based on organic molecules emitting from red to blue are also promising for new high-brightness solid state light sources.
Nevertheless, a number of technical and scientific issues need to be addressed for capitalizing on the advantages and potential of these unique materials, devices and related processes, including a better scientific understanding to achieve control in tailoring their properties.
The purpose of this Symposium is to provide a forum for scientists, engineers and industry experts to break new ground in the discussion, cross fertilization and advancement of solid state lighting materials, technology and applications by bringing together communities of the three main materials areas of compound semiconductors and organic materials. Among the recent developments that will be highlighted in the symposium are advances in synthesis of novel materials as bulk crystals, thin films and nanostructures; characterization of layers and interface properties on the nano- and micro-scale; device fabrication; and innovative light out-coupling.
Topics of interest include (but are not limited to):
Nevertheless, a number of technical and scientific issues need to be addressed for capitalizing on the advantages and potential of these unique materials, devices and related processes, including a better scientific understanding to achieve control in tailoring their properties.
The purpose of this Symposium is to provide a forum for scientists, engineers and industry experts to break new ground in the discussion, cross fertilization and advancement of solid state lighting materials, technology and applications by bringing together communities of the three main materials areas of compound semiconductors and organic materials. Among the recent developments that will be highlighted in the symposium are advances in synthesis of novel materials as bulk crystals, thin films and nanostructures; characterization of layers and interface properties on the nano- and micro-scale; device fabrication; and innovative light out-coupling.
Topics of interest include (but are not limited to):
- Methods for the growth or synthesis of bulk materials and thin-film
- Design and synthesis of novel LED materials and relative synthesis
- Novel synthesis and nanofabrication techniques for nanophotonic structures
- Optical and electronic properties
- Charge injection and transport
- Device physics and modeling
- Defect characterization and modeling
- Surfaces, interfaces, and defects
- Structure, microstructure, and inhomogeneities
- Manufacturing issues and analysis
Session Topics
FI-1 Material growth and processing
FI-2 Electro-optical characterization
FI-3 Device structures and manufacturing